Features: • High breakdown voltage and high reliability.• Ultrahigh-speed switching.• Wide ASO.• Adoption of MBIT process.PinoutSpecifications Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1000 V Collector-to-E...
2SC6112: Features: • High breakdown voltage and high reliability.• Ultrahigh-speed switching.• Wide ASO.• Adoption of MBIT process.PinoutSpecifications Parameter Symbol C...
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|
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
| Collector-to-Base Voltage |
VCBO |
1000 |
V | |
| Collector-to-Emitter Voltage |
VCEO |
500 |
V | |
| Emitter-to-Base Voltage |
VEBO |
7 |
V | |
| Collector Current |
IC |
8 |
A | |
| Collector Current (Pulse) |
ICP |
PW300s, duty cycle10% |
25 |
A |
| Collector Dissipation |
PC |
1.75 |
W | |
|
Tc=25 |
55 |
W | ||
| Junction Temperature |
Tj |
150 |
||
| Storage Temperature |
Tstg |
-55 to +150 |
| Absolute maximum ratings | |
|---|---|
| VCEO [V] | 500 |
| IC [A] | 15 |
| PC Tc=25°C [W] | 55 |
| Electrical characteristics | |
|---|---|
| hFE min | 40 |
| hFE max | 80 |
| VCE [V] | 5 |
| IC [A] | 1.2 |
| VCE (sat) max [V] | - |
| IC [A] | 6 |
| IB [A] | 1.2 |
| fT typ [MHz] | - |