Features: • High breakdown voltage and high reliability.• Ultrahigh-speed switching.• Wide ASO.• Adoption of MBIT process.PinoutSpecifications Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1000 V Collector-to-E...
2SC6112: Features: • High breakdown voltage and high reliability.• Ultrahigh-speed switching.• Wide ASO.• Adoption of MBIT process.PinoutSpecifications Parameter Symbol C...
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Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Collector-to-Base Voltage |
VCBO |
1000 |
V | |
Collector-to-Emitter Voltage |
VCEO |
500 |
V | |
Emitter-to-Base Voltage |
VEBO |
7 |
V | |
Collector Current |
IC |
8 |
A | |
Collector Current (Pulse) |
ICP |
PW300s, duty cycle10% |
25 |
A |
Collector Dissipation |
PC |
1.75 |
W | |
Tc=25 |
55 |
W | ||
Junction Temperature |
Tj |
150 |
||
Storage Temperature |
Tstg |
-55 to +150 |
Absolute maximum ratings | |
---|---|
VCEO [V] | 500 |
IC [A] | 15 |
PC Tc=25°C [W] | 55 |
Electrical characteristics | |
---|---|
hFE min | 40 |
hFE max | 80 |
VCE [V] | 5 |
IC [A] | 1.2 |
VCE (sat) max [V] | - |
IC [A] | 6 |
IB [A] | 1.2 |
fT typ [MHz] | - |