2SD1412A

The 2SD1412A is designed as toshiba transistor silicon NPN triple diffused type for power amplifier applications and high voltage switching applications. It has low saturation voltage which would be max 0.4V at Ic=4A.

Some absolute maximum ratings of 2SD1412A have been concluded into several points as follow. (1)Its collector to base voltage would be 70V. (2)Its collector to emitter voltage would be 50V. (3)Its emitter to base voltage would be 5V. (4)Its collector current would be 7A. (5)Its base current would be 1A. (6)Its collector power dissipation would be 2.0W at Ta=25°C and it would be 30W at Tc=25°C. (7)Its junction temperature would be 150°C. (8)Its storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of 2SD1412A are concluded as follow. (1)Its collector cutoff current would be max 30uA. (2)Its emitter cutoff current would be max 50uA. (3)Its collector to emitter breakdown voltage would be min 50V. (4)Its DC current gain would be min 70 and max 240 with conditions of Vce=1V and Ic=1A and it would be min 30 with conditions of Vce=1V and Ic=4A. (5)Its collector to emitter saturation voltage would be typ 0.2V and max 0.4V. (6)Its base to emitter saturation voltage would be typ 0.9V and max 1.2V. (7)Its collector output capacitance would be typ 250pF. (8)Its switching time would be typ 0.2us for turn-on time and would be typ 2.5us for storage time and would be typ 0.5us for fall time.

It should be noted that the information about 2SD1412A contained herein is presented only as a guide for the applications of toshiba products. No responsibility is assumed by toshiba sorporation for any infringements of implication or otherwise under any intellectual property or other rights of toshiba corporation or others. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!