Features: · Adoption of FBET, MBIT processes.· Large current capacity and wide ASO.· Low collector-to-emitter saturation voltage.· Fast switching speed.· Small and slim package making it easy to make 2SB1201/2SD1801-used sets smaller.Application· Voltage regulators, relay drivers, lamp drivers, el...
2SD1801: Features: · Adoption of FBET, MBIT processes.· Large current capacity and wide ASO.· Low collector-to-emitter saturation voltage.· Fast switching speed.· Small and slim package making it easy to mak...
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| Absolute maximum ratings | |
|---|---|
| VCEO [V] | 50 |
| IC [A] | 2 |
| PC [W] | 15
Tc=25°C |
| Electrical characteristics | |
|---|---|
| hFE min | 100 |
| hFE max | 560 |
| VCE [V] | 2 |
| IC [A] | 0.1 |
| VCE (sat) typ [V] | 0.15 |
| VCE (sat) max [V] | 0.4 |
| IC [A] | 1 |
| IB [mA] | 50 |
|
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
|
Collector-to-Base Voltage |
VCBO |
()60 |
V | |
|
Collector-to-Emitter Voltage |
VCEO |
()50 |
V | |
|
Emitter-to-Base Voltage |
IEBO |
()6 |
V | |
|
Drain Current |
IC |
()2 |
A | |
|
Collector Current (Pulse) |
ICP |
()4 |
A | |
|
Allowable Power Dissipation |
PD |
0.8 |
W | |
|
Tc=25°C |
15 |
W | ||
|
Channel Temperature |
Tj |
150 |
°C | |
|
Storage Temperature |
Tstg |
55 to +150 |
°C |