Features: · High speed.· High breakdown voltage (VCBO=1500V).· High reliability (Adoption of HVP process).· Adoption of MBIT process.· On-chip damper diode.PinoutSpecifications Absolute maximum ratings VCBO [V] 1500 VCEO [V] 800 IC [A] 8 PC[W] 60 Tc=25°C ...
2SD2578: Features: · High speed.· High breakdown voltage (VCBO=1500V).· High reliability (Adoption of HVP process).· Adoption of MBIT process.· On-chip damper diode.PinoutSpecifications Absolute...
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| Absolute maximum ratings | |
|---|---|
| VCBO [V] | 1500 |
| VCEO [V] | 800 |
| IC [A] | 8 |
| PC[W] | 60
Tc=25°C |
| Electrical characteristics | |
|---|---|
| hFE min | 15 |
| hFE max | 30 |
| VCE [V] | 5 |
| IC [A] | 1 |
| VCE (sat) max [V] | 5 |
| IC [A] | 5 |
| IB [A] | 1 |
| tf max [µs] | 0.3 |
|
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
|
Collector-to-Base Voltage |
VCBO |
1500 |
V | |
|
Collector-to-Emitter Voltage |
VCEO(sus) |
800 |
V | |
|
Emitter-to-Base Voltage |
VEBO |
6 |
V | |
|
Collector Current |
Ic |
8 |
mA | |
|
Collector Current (pulse) |
Icp |
20 |
mA | |
|
Collector Dissipation |
Pc |
3.0 |
mW | |
|
Tc=25°C |
60 |
mW | ||
|
Junction Temperature |
Tj |
150 |
°C | |
|
Storage Temperature |
Tstg |
55 to +150 |
°C |