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2SD2580

Features: · High speed.· High breakdown voltage (VCBO=1500V).· High reliability (Adoption of HVP process).· Adoption of MBIT process.· On-chip damper diode.PinoutSpecifications Absolute maximum ratings VCBO [V] 1500 VCEO [V] 800 IC [A] 10 PC[W] 70 Tc=25°C ...

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2SD2580: Features: · High speed.· High breakdown voltage (VCBO=1500V).· High reliability (Adoption of HVP process).· Adoption of MBIT process.· On-chip damper diode.PinoutSpecifications Absolute...

2SD2580 Data Sheet

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Part Number:
2SD2580
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· High speed.
· High breakdown voltage (VCBO=1500V).
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.
· On-chip damper diode.




Pinout






Specifications

Absolute maximum ratings
VCBO [V] 1500
VCEO [V] 800
IC [A] 10
PC[W] 70
Tc=25°C
Electrical characteristics
hFE min 15
hFE max 30
VCE [V] 5
IC [A] 1
VCE (sat) max [V] 5
IC [A] 8
IB [A] 1.6
tf max [µs] 0.3


Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
1500
V
Collector-to-Emitter Voltage
VCEO(sus)
800
V

Emitter-to-Base Voltage

VEBO

6

V

Collector Current
Ic
10
mA
Collector Current (pulse)
Icp

30
mA
Collector Dissipation
Pc
3.0
mW

Tc=25°C

70

mW

Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
55 to +150
°C





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