Features: · High speed.· High breakdown voltage (VCBO=1500V).· High reliability (Adoption of HVP process).· Adoption of MBIT process.PinoutSpecifications Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Vo...
2SD2581: Features: · High speed.· High breakdown voltage (VCBO=1500V).· High reliability (Adoption of HVP process).· Adoption of MBIT process.PinoutSpecifications Parameter Symbol Conditions ...
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|
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
|
Collector-to-Base Voltage |
VCBO |
1500 |
V | |
|
Collector-to-Emitter Voltage |
VCEO(sus) |
800 |
V | |
|
Emitter-to-Base Voltage |
VEBO |
6 |
V | |
|
Collector Current |
Ic |
10 |
mA | |
|
Collector Current (pulse) |
Icp |
30 |
mA | |
|
Collector Dissipation |
Pc |
3.0 |
mW | |
|
Tc=25°C |
70 |
mW | ||
|
Junction Temperature |
Tj |
150 |
°C | |
|
Storage Temperature |
Tstg |
55 to +150 |
°C |
| Absolute maximum ratings | |
|---|---|
| VCBO [V] | 1500 |
| VCEO [V] | 800 |
| IC [A] | 10 |
| PC[W] | 70
Tc=25°C |
| Electrical characteristics | |
|---|---|
| hFE min | 20 |
| hFE max | 35 |
| VCE [V] | 5 |
| IC [A] | 1 |
| VCE (sat) max [V] | 5 |
| IC [A] | 8 |
| IB [A] | 1.6 |
| tf max [µs] | 0.3 |