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2SD2645

Features: • High speed.• High breakdown voltage(VCBO=1500V).• High reliability(Adoption of HVP process).• Adoption of MBIT process.• On-chip damper diode.PinoutSpecifications Absolute maximum ratings VCBO [V] 1500 VCEO [V] 800 IC [A] 10 PC[...

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2SD2645: Features: • High speed.• High breakdown voltage(VCBO=1500V).• High reliability(Adoption of HVP process).• Adoption of MBIT process.• On-chip damper diode.PinoutSpecific...

2SD2645 Data Sheet

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Part Number:
2SD2645
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• High speed.
• High breakdown voltage(VCBO=1500V).
• High reliability(Adoption of HVP process).
• Adoption of MBIT process.
• On-chip damper diode.




Pinout






Specifications

Absolute maximum ratings
VCBO [V] 1500
VCEO [V] 800
IC [A] 10
PC[W] 80
Tc=25°C
Electrical characteristics
hFE min 5
hFE max 8
VCE [V] 5
IC [A] 8
VCE (sat) max [V] 3
IC [A] 7.2
IB [A] 1.44
tf max [µs] 0.3


Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
1500
V
Collector-to-Emitter Voltage
VCEO
800
V

Emitter-to-Base Voltage

VEBO

5

V

Collector Current
Ic
10
mA
Collector Current (pulse)
Icp

25
mA
Collector Dissipation
Pc
3.0
mW

Tc=25°C

80

mW

Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
55 to +150
°C





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