2SJ058200L

MOSFET P-CH 200V 2A U-G2

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SeekIC No. : 003433685 Detail

2SJ058200L: MOSFET P-CH 200V 2A U-G2

floor Price/Ceiling Price

Part Number:
2SJ058200L
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2026/2/3

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Product Details

Quick Details

Series: - Manufacturer: Panasonic Electronic Components - Semiconductor Products
FET Type: MOSFET P-Channel, Metal Oxide Transistor Type: -
Gain : 11.5 dB at 500 MHz Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 200V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 2A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) @ Vgs: -
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 400pF @ 20V
Power - Max: 10W Mounting Type: Surface Mount
Package / Case: U-G2 Supplier Device Package: U-G2    

Description

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
FET Feature: Standard
Gate Charge (Qg) @ Vgs: -
Power - Max: 10W
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25° C: 2A
Packaging: Cut Tape (CT)
Manufacturer: Panasonic Electronic Components - Semiconductor Products
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 10V
Package / Case: U-G2
Input Capacitance (Ciss) @ Vds: 400pF @ 20V
Supplier Device Package: U-G2


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