MOSFET P-CH 200V 2A U-G2
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| Series: | - | Manufacturer: | Panasonic Electronic Components - Semiconductor Products | ||
| FET Type: | MOSFET P-Channel, Metal Oxide | Transistor Type: | - | ||
| Gain : | 11.5 dB at 500 MHz | Current - Collector (Ic) (Max): | - | ||
| FET Feature: | Standard | Drain to Source Voltage (Vdss): | 200V | ||
| Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 2A | ||
| Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
| Rds On (Max) @ Id, Vgs: | 2 Ohm @ 1A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
| Vgs(th) (Max) @ Id: | 4V @ 1mA | Gate Charge (Qg) @ Vgs: | - | ||
| Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 400pF @ 20V | ||
| Power - Max: | 10W | Mounting Type: | Surface Mount | ||
| Package / Case: | U-G2 | Supplier Device Package: | U-G2 |