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2SJ305

Application• High input impedance• Low gate threshold voltage.: Vth = −0.5~−1.5 V• Excellent switching times.: ton = 0.06 s (typ.) toff = 0.15 s (typ.)• Low drain-source ON resistance: RDS (ON) = 2.4 (typ.)• Small package.• Complementary to 2SK2009S...

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SeekIC No. : 004225080 Detail

2SJ305: Application• High input impedance• Low gate threshold voltage.: Vth = −0.5~−1.5 V• Excellent switching times.: ton = 0.06 s (typ.) toff = 0.15 s (typ.)• Low drain...

2SJ305 Data Sheet

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Part Number:
2SJ305
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Application

• High input impedance
• Low gate threshold voltage.: Vth = −0.5~−1.5 V
• Excellent switching times.: ton = 0.06 s (typ.)
                                             toff = 0.15 s (typ.)
• Low drain-source ON resistance: RDS (ON) = 2.4 (typ.)
• Small package.
• Complementary to 2SK2009


Specifications

Characteristics Symbol Rating Unit
Drain-source voltage VDS −30 V
Gate-source voltage VGSS ±20 V
DC drain current ID −200 mA
Drain power dissipation PD 200 mW
Channel temperature Tch 150
Storage temperature range Tstg −55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note: This transistor is electrostatic sensitive device.
          Please handle with caution.




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