2SJ313-Y(Q)

The 2SJ313-Y(Q) is a kind of TOSHIBA field effect transistor which is desiged for the audio frequency power amplifier applications. Features of 2SJ313 are:(1)high breakdown voltage: VDSS= -180 V; (2)high forward transfer admittance: Yfs is 0.7 S typ; (3)complementary to 2SK2013.

The absolute maximum ratings of 2SJ313-Y(Q) can be summerized as:(1): drain-source voltage, VDSS is -180 V; (2): drain-source voltage is +/-20 V; (3): DC drain current, ID is -1 A; (5): drain power dissipation(ta is 25), PD is 25 W; (6): channel temperature, Tch is 150; (7): storage temeprature range, tstg is -55 to 150.

The electrical characteristics of 2SJ313-Y(Q) can be summerized as:(1): gate leakage current, IGSS is ±100 nA; (2): drain-source breakdown voltage, V(BR)DSS is -180 V; (3): drain cut-off current, IDSS is -0.8 to -2.8 V; (4): input capacitance: 210 pF; (5): output capacitance is 90 pF. If you want to know more information such as the electrical characteristics about 2SJ313-Y(Q), please download the datasheet in www.seekic.com or www.chinaicmart.com.