Purchase 2SJ313, In-stock 2SJ313 From SeekIC.
MFG:TOS Package Cooled:TO-220 D/C:04+
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2SJ313
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DataSheet
General Description
2SJ313 Maximum Ratings
| Characteristics | Symbol | Ratings | Unit |
| Drain-Source Voltage | VDSS | −180 | V |
| Gate-Source Voltage | VGSS | ±20 | V |
| Drain current (Note 1) | ID | −1 | A |
| Power dissipation (Tc = 25°C) | PD | 25 | W |
| Channel Temperature | Tch | 150 | |
| Storage temperature range | Tstg | -55~150 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating onditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
2SJ313 Typical Application
High breakdown voltage: VDSS = −180 V
High forward transfer admittance: |Yfs| = 0.7 S (typ.)
Complementary to 2SK2013
High forward transfer admittance: |Yfs| = 0.7 S (typ.)
Complementary to 2SK2013
2SJ313
PDF/DataSheet Download
- Datasheet: 2SJ313
- File Size: 169071 KB
- Manufacturer: TOSHIBA [Toshiba Semiconductor]
- Click here to Download
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