2SJ320

The 2SJ320 is a kind of P-channel MOS silicon FET device that can be used in very high-speed switching applications. Features of 2SJ320 are:(1)low on-state resistance;(2)very high-speed switching;(3)low-voltage drive;(4)micaless package facilitating mounting.

The absolute maximum ratings of 2SJ320 can be summerized as:(1): drain to source voltage: -250 V;(2)gate to source voltage: +/- 30 V;(3)drain current (DC): -4 A;(4)drain current (pulse): -16 A;(5)allowable power dissipation: 2.0 W or 25 W;(6)channel temperature: 150 ;(7)storage temperature: -55 to +150 .

The electrical characteristics of 2SJ320 can be summerized as:(1)D-S breakdown voltage: -250 V;(2)zero gate voltage: -100 uA;(3)gate to source leakage current: +/- 10 uA;(4)cutoff voltage: -1.5 to -2.5 V;(5)forward transfer admittance: 1.8 to 3 s;(6)static drain to source: 1.0 to 1.3 ;(7)input capacitance: 750 pF;(8)output capacitance: 140 pF;(9)reverse transfer capacitance: 65 pF;(10)turn-on delay time: 17 ns;(11)rise time: 23 ns. If you want to know more information such as the electrical characteristics about 2SJ320, please download the datasheet in www.seekic.com or www.chinaicmart.com.