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Features: `Low on-state resistance RDS(on)=0.18 (VGS=-10V,ID=-1A) RDS(on)=0.36 (VGS=-4V,ID=-0.8A)`Built-in G-S Gate Protection DiodeSpecifications Parameter Symbol Rating Unit Drain to source voltage VDSS 30 V Gate to source voltage (DC) VGSS -20,+10 V Gate to source voltage...

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SeekIC No. : 004225102 Detail

2SJ324: Features: `Low on-state resistance RDS(on)=0.18 (VGS=-10V,ID=-1A) RDS(on)=0.36 (VGS=-4V,ID=-0.8A)`Built-in G-S Gate Protection DiodeSpecifications Parameter Symbol Rating Unit Drain to so...

2SJ324 Data Sheet

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Part Number:: 2SJ324
Supply Ability:: 5000

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Upload time: 2025/12/6

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Product Details

Description

Features:

`Low on-state resistance
R_DS(on)=0.18 (V_GS=-10V,I_D=-1A)
R_DS(on)=0.36 (V_GS=-4V,I_D=-0.8A)
`Built-in G-S Gate Protection Diode

Specifications

Parameter	Symbol	Rating	Unit
Drain to source voltage	V_DSS	30	V
Gate to source voltage (DC)	V_GSS	-20,+10	V
Gate to source voltage (AC)	V_GSS	±20	V
Drain current (DC)	I_D	±2.0	A
Pulsed Drain Current *2	I_D	±8.0	A
Power Dissipation T_A=25 T_A=25	P_D	20 1.0	W
Channel temperature	T_ch	150
Storage Temperature	T_stg	-55 to 150

* PW 10 s; d 1%.

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2SJ324

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