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Part Number: 2SJ346

 

 

 

 

 

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2SJ346 Maximum Ratings

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDS

-20

V

Gate-source voltage

VGSS

-7

V

DC drain current

ID

-50

mA

Drain power dissipation

PD

100

mW

Channel temperature

Tch

150

Storage temperature range

Tstg

−55~150

2SJ346 Features

• Low threshold voltage: Vth = −0.5~−1.5 V
• High speed
• Small package
• Complementary to 2SK1829

2SJ346 datasheet

2SJ346
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2SJ346 Relative Products

  • 2SJ345-GR

    2SJ345-GR

    The 2SJ345-GR is a kind of TOSHIBA field effect transistor which is desiged for the high speed switching and anarog switch applications. Features of 2SJ345-GR are:(1)enhancement-mode;(2)low gate threshold voltage: Vth= -0.5 to -1.5 V;(3)small package;(4)comp...

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  • 2SJ344/KQ

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    The 2SJ344/KQ is a kind of TOSHIBA field effect transistor, silicon P channel MOS type which is desiged for the high speed switching and anarog switch applications. Features of 2SJ344/KQ are:(1)enhancement-mode;(2)low gate threshold voltage: Vth= -0.8 to -2....

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  • 2SJ343KN

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    The 2SJ343KN is a kind of TOSHIBA field effect transistor which is desiged for the high speed switching and anarog switch applications. Features of 2SJ343KN are:(1)enhancement-mode;(2)low drain-source ON resistance: RDS(on) = 2.4 ;(3)low gate threshold volta...

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