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2SJ349(F,T): MOSFET MOSFET P-Ch 60V 20A Rdson 0.045 Ohm

2SJ349(F,T) Data Sheet

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Part Number:: 2SJ349(F,T)
Mfg:: Toshiba
Supply Ability:: 5000

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Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	- 60 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	20 A
Resistance Drain-Source RDS (on) :	0.045 Ohms	Configuration :	Single
Mounting Style :	Through Hole	Package / Case :	TO-220 NIS
Packaging :	Reel

Description

Maximum Operating Temperature :
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Packaging : Reel
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Continuous Drain Current : 20 A
Drain-Source Breakdown Voltage : - 60 V
Resistance Drain-Source RDS (on) : 0.045 Ohms
Package / Case : TO-220 NIS

Parameters:

Technical/Catalog Information	2SJ349(F,T)
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	20A
Rds On (Max) @ Id, Vgs	45 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds	2800pF @ 10V
Power - Max	45W
Packaging	Tube
Gate Charge (Qg) @ Vgs	90nC @ 10V
Package / Case	2-10R1B
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2SJ349 F,T 2SJ349F,T

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2SJ349(F,T)

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