2SJ361 Selling Leads, Price trend, 2SJ361 DataSheet download, circuit diagram from SeekIC.com

Features: · Low on-resistance· High speed switching· Low drive current· 2.5 V gate drive device can be driven from 3 V sourceApplicationHigh speed power switchingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSX -20 V Gate to source vo...

See larger image

SeekIC No. : 004225137 Detail

2SJ361: Features: · Low on-resistance· High speed switching· Low drive current· 2.5 V gate drive device can be driven from 3 V sourceApplicationHigh speed power switchingSpecifications Item Symbo...

2SJ361 Data Sheet

Get Latest Price

Part Number:: 2SJ361
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

SeekIC Buyer Protection PLUS - newly updated for 2013!

Escrow Protection.
Guaranteed refunds.
Secure payments.
Learn more >>

Month Sales

268 Transactions

Rating

evaluate (4.8 stars)

Upload time: 2024/4/18

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.

Recent History
What is this?

2SJ302 evaluate
Features: ` Low on-state resistance` RDS(on) 0.1 (VGS=-10V,ID=-8A)` RDS(on) 0.24 (VGS=-4V,ID=-6A)`...
2SJ303 evaluate
SpecificationsDescriptionThe 2SJ303 is a kind of MOS field effect power transistor, switching P ch...
2SJ304(F) evaluate
MOSFET MOSFET P-Ch 60V 14A Rdson 0.12 Ohm

Product Details

Description

Features:

· Low on-resistance
· High speed switching
· Low drive current
· 2.5 V gate drive device can be driven from 3 V source

Application

High speed power switching

Specifications

Item	Symbol	Ratings	Unit
Drain to source voltage	V_DSX	-20	V
Gate to source voltage	V_GSS	±20	V
Drain current	I_D	-2	A
Drain peak current	ID(pulse)*1	-4	A
Body to drain diode reverse drain current	I_DR	-2	A
Channel dissipation	Pch*1	1	W
Channel temperature	Tch	150	°C
Storage temperature	Tstg	55 to +150	°C

Customers Who Bought This Item Also Bought

2SJ302-Z-E1
US $$0.22 - 0.25 / Piece

Supply Ability:10000Week

View details
2SJ308
US $$0.50 - 0.80 / Piece

Supply Ability:5000Day

View details
FET Diodes
US $$0.18 - 0.22 / Piece

Supply Ability:100Week

View details
(Triode) 2SJ328-Z-AZ NEC SMD HOT OFFER!!!
US $$0.40 - 0.50 / Piece

Supply Ability:100000000Week

View details
2SJ349,TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
US $$7.00 - 7.00 / Piece

Supply Ability:500Week

View details

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.

2SJ361

product image

floor Price/Ceiling Price

Price Break

Month Sales

Rating

Payment Methods

Recent History

Description

Customers Who Bought This Item Also Bought

Prototyping Products(332)

Inductors, Coils, Chokes(1216)

Test Equipment(3237)

Optoelectronics(3638)

Isolators(194)

Power Supplies - External/Internal (Off-Board)(631)