2SJ378(TP,Q)

MOSFET P-CH 60V 5A TPS

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SeekIC No. : 003433030 Detail

2SJ378(TP,Q): MOSFET P-CH 60V 5A TPS

floor Price/Ceiling Price

US $ .31~.31 / Piece | Get Latest Price
Part Number:
2SJ378(TP,Q)
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~2000
  • Unit Price
  • $.31
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/19

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Product Details

Quick Details

Series: - Manufacturer: Toshiba
FET Type: MOSFET P-Channel, Metal Oxide Transistor Type: -
Typical Resistor Ratio : 4.5 Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 5A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 190 mOhm @ 2.5A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) @ Vgs: 22nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 630pF @ 10V
Power - Max: 1.3W Mounting Type: Through Hole
Package / Case: TO-220-3 No Tab Supplier Device Package: TPS    

Description

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25° C: 5A
Power - Max: 1.3W
Gate Charge (Qg) @ Vgs: 22nC @ 10V
Mounting Type: Through Hole
Vgs(th) (Max) @ Id: 2V @ 1mA
Input Capacitance (Ciss) @ Vds: 630pF @ 10V
Manufacturer: Toshiba
Packaging: Tape & Box (TB)
Rds On (Max) @ Id, Vgs: 190 mOhm @ 2.5A, 10V
Package / Case: TO-220-3 No Tab
Supplier Device Package: TPS


Parameters:

Technical/Catalog Information2SJ378(TP,Q)
VendorToshiba
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C5A
Rds On (Max) @ Id, Vgs190 mOhm @ 2.5A, 10V
Input Capacitance (Ciss) @ Vds 630pF @ 10V
Power - Max1.3W
PackagingTape & Box (TB)
Gate Charge (Qg) @ Vgs22nC @ 10V
Package / Case*
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SJ378 TP,Q
2SJ378TP,Q



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