MOSFET P-CH 60V 5A TPS
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| Series: | - | Manufacturer: | Toshiba | ||
| FET Type: | MOSFET P-Channel, Metal Oxide | Transistor Type: | - | ||
| Typical Resistor Ratio : | 4.5 | Current - Collector (Ic) (Max): | - | ||
| FET Feature: | Logic Level Gate | Drain to Source Voltage (Vdss): | 60V | ||
| Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 5A | ||
| Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
| Rds On (Max) @ Id, Vgs: | 190 mOhm @ 2.5A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
| Vgs(th) (Max) @ Id: | 2V @ 1mA | Gate Charge (Qg) @ Vgs: | 22nC @ 10V | ||
| Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 630pF @ 10V | ||
| Power - Max: | 1.3W | Mounting Type: | Through Hole | ||
| Package / Case: | TO-220-3 No Tab | Supplier Device Package: | TPS |
| Technical/Catalog Information | 2SJ378(TP,Q) |
| Vendor | Toshiba |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 5A |
| Rds On (Max) @ Id, Vgs | 190 mOhm @ 2.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 630pF @ 10V |
| Power - Max | 1.3W |
| Packaging | Tape & Box (TB) |
| Gate Charge (Qg) @ Vgs | 22nC @ 10V |
| Package / Case | * |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | 2SJ378 TP,Q 2SJ378TP,Q |