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2SJ407(F)

MOSFET MOSFET P-Ch 200V 5A Rdson 1 Ohm

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SeekIC No. : 00164177 Detail

2SJ407(F): MOSFET MOSFET P-Ch 200V 5A Rdson 1 Ohm

2SJ407(F) Data Sheet

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Part Number:
2SJ407(F)
Mfg:
Toshiba
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 5 A
Resistance Drain-Source RDS (on) : 1 Ohms Configuration : Single
Mounting Style : Through Hole Package / Case : TO-220 NIS
Packaging : Bulk    

Description

Maximum Operating Temperature :
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Packaging : Bulk
Continuous Drain Current : 5 A
Resistance Drain-Source RDS (on) : 1 Ohms
Drain-Source Breakdown Voltage : - 200 V
Package / Case : TO-220 NIS


Parameters:

Technical/Catalog Information2SJ407(F)
VendorToshiba
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C5A
Rds On (Max) @ Id, Vgs1 Ohm @ 2.5A, 10V
Input Capacitance (Ciss) @ Vds 800pF @ 10V
Power - Max30W
PackagingTube
Gate Charge (Qg) @ Vgs20nC @ 10V
Package / Case2-10R1B
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SJ407 F
2SJ407F



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