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2SJ412(SM,Q)

MOSFET P-Ch 100V 16A Rdson 0.21 Ohm

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SeekIC No. : 00164110 Detail

2SJ412(SM,Q): MOSFET P-Ch 100V 16A Rdson 0.21 Ohm

2SJ412(SM,Q) Data Sheet

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Part Number:
2SJ412(SM,Q)
Mfg:
Toshiba
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 100 V
Continuous Drain Current : - 16 A Resistance Drain-Source RDS (on) : 0.32 Ohms
Configuration : Single Mounting Style : Through Hole
Package / Case : TO-220 SM    

Description

Gate-Source Breakdown Voltage :
Maximum Operating Temperature :
Packaging :
Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Continuous Drain Current : - 16 A
Drain-Source Breakdown Voltage : - 100 V
Resistance Drain-Source RDS (on) : 0.32 Ohms
Package / Case : TO-220 SM


Parameters:

Technical/Catalog Information2SJ412(SM,Q)
VendorToshiba
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C16A
Rds On (Max) @ Id, Vgs210 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds 1100pF @ 10V
Power - Max60W
PackagingTube
Gate Charge (Qg) @ Vgs48nC @ 10V
Package / CaseTO-220SM
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SJ412 SM,Q
2SJ412SM,Q



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