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2SJ449

Features: • Low On-Resistance RDS(on) = 0.8 MAX. (@ VGS = 10 V, ID = 3.0 A)• Low Ciss Ciss = 1040 pF TYP.• High Avalanche Capability Ratings• Isolated TO-220 PackageSpecifications Item Symbol Rating Unit Drain to source voltage VDSS -250 V Ga...

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SeekIC No. : 004225178 Detail

2SJ449: Features: • Low On-Resistance RDS(on) = 0.8 MAX. (@ VGS = 10 V, ID = 3.0 A)• Low Ciss Ciss = 1040 pF TYP.• High Avalanche Capability Ratings• Isolated TO-220 PackageSpecific...

2SJ449 Data Sheet

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Part Number:
2SJ449
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low On-Resistance
   RDS(on) = 0.8 MAX. (@ VGS = 10 V, ID = 3.0 A)
• Low Ciss   Ciss = 1040 pF TYP.
• High Avalanche Capability Ratings
• Isolated TO-220 Package


Specifications

Item
Symbol
Rating
Unit
Drain to source voltage
VDSS
-250
V
Gate to vource voltage
VGSS
±30
V
Continous Drain (DC)
ID
±6.0
A
Drain Current(Pulse)*
IDP
±24
A
Total Power Dissipation(Tc = 25 °C)
PT1
35
W
Total Power Dissipation (TA = 25 °C)
PT2
2.0
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
-55to+150
°C
Single Avalanche Current**
IAS
-6.0
A
Single Avalanche Energy**
EAS
180
mJ
* PW 10 s, Duty Cycle 1 %
** Starting Tch = 25 °C, RG = 25 , VGS = 20 V 0


Description

The 2SJ449 is P-Channel MOS Field Effect Transistor designed for high voltage switching applications.


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