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2SJ494

Features: • Super Low On-State Resistance RDS(on)1 = 50 m: Max. (VGS = 10 V, ID = 10 A) RDS(on)2 = 88 m: Max. (VGS = 4 V, ID = 10 A)• Low Ciss Ciss = 2360 pF Typ.• Built-in Gate Protection DiodeSpecifications Drain to Source VoltageGate to Source Voltage*Gate to Source Volta...

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SeekIC No. : 004225210 Detail

2SJ494: Features: • Super Low On-State Resistance RDS(on)1 = 50 m: Max. (VGS = 10 V, ID = 10 A) RDS(on)2 = 88 m: Max. (VGS = 4 V, ID = 10 A)• Low Ciss Ciss = 2360 pF Typ.• Built-in Gate Pr...

2SJ494 Data Sheet

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Part Number:
2SJ494
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Super Low On-State Resistance
   RDS(on)1 = 50 m: Max. (VGS = 10 V, ID = 10 A)
   RDS(on)2 = 88 m: Max. (VGS = 4 V, ID = 10 A)
• Low Ciss Ciss = 2360 pF Typ.
• Built-in Gate Protection Diode


Specifications

Drain to Source Voltage

Gate to Source Voltage*

Gate to Source Voltage

Drain Current (DC)

Drain Current (pulse)**

Total Power Dissipation (TC = 25°C)

Total Power Dissipation (TA = 25°C)

Channel Temperature

Storage Temperature		 VDSS

VGSS(AC)

VGSS(DC)

ID(DC)

ID(pulse)

PT

PT

Tch

Tstg		 60

+20

20, 0

+30

+120

35

2.0

150

55 to +150		 V

V

V

A

A

W


W
°C

°C



Description

This 2SJ494 is P-Channel MOS Field Effect Transistor designed for high current switching applications.


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