Features: • Low on-resistance RDS (on) = 0.017 typ.• Low drive current.• 4 V gate drive devices.• High speed switching.Specifications Item Symbol Value Unit Drain to source voltage VDSS -60 V Gate to source voltage VGSS ±20 V Drain ...
2SJ505: Features: • Low on-resistance RDS (on) = 0.017 typ.• Low drive current.• 4 V gate drive devices.• High speed switching.Specifications Item Symbol Value Unit ...
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| Item |
Symbol |
Value |
Unit |
| Drain to source voltage |
VDSS |
-60 |
V |
| Gate to source voltage |
VGSS |
±20 |
V |
| Drain current |
ID |
-50 |
A |
| Drain peak current |
ID (pulse) Note 1 |
-200 |
A |
| Body to drain diode reverse drain current |
IDR |
-50 |
A |
| Avalanche current |
IAP Note 3 |
-50 |
A |
| Avalanche energy |
EAR Note 3 |
214 |
mJ |
| Channel dissipation |
Pch Note 2 |
75 |
W |
| Channel temperature |
Tch |
150 |
|
| Storage temperature |
Tstg |
55 to +150 |