Position: Home  > All Categories> Integrated Circuits (ICs) > 2SJ508

2SJ508

Features: ` 4-V gate drive` Low drain−source ON resistance : R DS (ON) = 1.34 (typ.)` High forward transfer admittance : |Yfs| = 0.7 S (typ.)` Low leakage current : IDSS = −100 A(max) (VDS = −100 V)` Enhancement mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = ͨ...

product image

2SJ508 Picture
See larger image
SeekIC No. : 004225227 Detail

2SJ508: Features: ` 4-V gate drive` Low drain−source ON resistance : R DS (ON) = 1.34 (typ.)` High forward transfer admittance : |Yfs| = 0.7 S (typ.)` Low leakage current : IDSS = −100 A(max) (...

2SJ508 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
2SJ508
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/5

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

` 4-V gate drive
` Low drain−source ON resistance : R DS (ON) = 1.34 (typ.)
` High forward transfer admittance : |Yfs| = 0.7 S (typ.)
` Low leakage current : IDSS = −100 A(max) (VDS = −100 V)
` Enhancement mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)


Specifications

Parameter Symbol Value Unit
Drain-source (GND) voltage (1) VDSS -100 V
Drain-Source Voltage VDGR -100 V
Gate-Source Voltage VGSS ±30 V
Drain current DC (Note 1) ID -1 A
Pulse (Note 1) IDP -3
Power Dissipation PD 0.5 W
Power Dissipation(Note 2) PD 1.5 W
Single pulsed avalanche energy (Note 3) Eas 136.5 mJ
Avalanche current Iar -1 A
Repetitive avalanche energy (Note 4) Ear 0.05 mJ
Operating Temperature TCH 150
Storage Temperature Tstg -55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Mounted on a ceramic substrate (25.4 mm * 25.4 mm * 0.8 mm)
Note 3: VDD = −50 V, Tch = 25°C (initial), L = 168 mH, RG = 25 , IAR = −1 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Audio Products
HUC1002
WM-64CT
Discrete Semiconductor Products
T508N12TOF
MUR20040
Memory Cards, Modules
WT32
VTL5C7
Filters
PICO2205A
PICO2204A
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
Line Protection, Backups
BX0023
A20B-1008-0550
View more