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MFG:N/A  Package Cooled:NA/  D/C:09+  

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Part Number: 2SJ567

 

MFG: N/A

Package Cooled: NA/

D/C: 09+

 

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2SJ567 Maximum Ratings

Characteristics Symbol Rating Unit
Drain-source voltage VDSS -200 V
Drain-gate voltage (RGS= 20 k) VDGR -200 V
Gate-source voltage VGSS ±20 V
Drain current DC (Note 1) ID -2.5 A
Pulse (Note 1) IDP -10
Drain power dissipation (Tc = 25°C) PD 20 W
Single pulse avalanche energy
(Note 2)
EAS 97.5 mJ
Avalanche current IAR -2.5 A
Repetitive avalanche energy (Note 3) EAR 2.0 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg -55~150 °C

2SJ567 Features

`Low drain-source ON resistance: RDS (ON) = 1.6 (typ.)
`High forward transfer admittance: |Yfs| = 2.0 S (typ.)
`Low leakage current: IDSS = −100 A (max) (VDS = −200 V)
`Enhancement-model: Vth = −1.5 ~ −3.5 V (VDS = −10 V, ID = −1 mA)

2SJ567 datasheet

2SJ567
PDF/DataSheet Download

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