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2SJ601

Features: • Low on-state resistance:RDS(on)1 = 31 m MAX. (VGS = 10 V, ID = 18 A)RDS(on)2 = 46 m MAX. (VGS = 4.0 V, ID = 18 A)• Low Ciss: Ciss = 3300 pF TYP.• Built-in gate protection diode• TO-251/TO-252 packageSpecifications Parameter Symbol Ratings Unit Drain t...

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SeekIC No. : 004225322 Detail

2SJ601: Features: • Low on-state resistance:RDS(on)1 = 31 m MAX. (VGS = 10 V, ID = 18 A)RDS(on)2 = 46 m MAX. (VGS = 4.0 V, ID = 18 A)• Low Ciss: Ciss = 3300 pF TYP.• Built-in gate protecti...

2SJ601 Data Sheet

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Part Number:
2SJ601
Supply Ability:
5000

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  • 1~5000
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  • Processing time
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Product Details

Description



Features:

• Low on-state resistance:
RDS(on)1 = 31 m MAX. (VGS = 10 V, ID = 18 A)
RDS(on)2 = 46 m MAX. (VGS = 4.0 V, ID = 18 A)
• Low Ciss: Ciss = 3300 pF TYP.
• Built-in gate protection diode
• TO-251/TO-252 package




Specifications

Parameter Symbol Ratings Unit
Drain to Source Voltage(VGS = 0 V) VDSS 60 V
Gate to Source Voltage(VDS = 0 V) VGSS ±20 V
Drain Current (TC = 25°C) ID(DC) ±36 A
Drain Current Note1 ID(pulse) ±120 A
Total Power Dissipation(TC = 25°C) PT 65 W
Total Power Dissipation(TA = 25°C) PT 1.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg 55 to +150 °C
Single Avalanche Current Note2 IAS -35 A
Single Avalanche Energy Note2 EAS 123 mJ



Notes 1. PW 10 s, Duty Cycle 1 %
2. Starting Tch = 25°C,  RG = 25 , VGS = -20 0 V




Description

The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.


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