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MFG:NEC  Package Cooled:TO-262  D/C:09+  

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Part Number: 2SJ606

 

MFG: NEC

Package Cooled: TO-262

D/C: 09+

Description: The 2SJ606 is P-channel MOS Field Effect Transistor designed for high current switching applications.


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2SJ606 General Description


The 2SJ606 is P-channel MOS Field Effect Transistor designed for high current switching applications.

2SJ606 Maximum Ratings

Parameter Symbol Ratings Unit
Drain to Source Voltage(VGS = 0 V) VDSS 60 V
Gate to Source Voltage(VDS = 0 V) VGSS ±20 V
Drain Current (TC = 25°C) ID(DC) ±83 A
Drain Current Note1 ID(pulse) ±300 A
Total Power Dissipation(TC = 25°C) PT 120 W
Total Power Dissipation(TA = 25°C) PT 1.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg 55 to +150 °C
Single Avalanche Current Note2 IAS -40 A
Single Avalanche Energy Note2 EAS 160 mJ



Notes 1. PW 10 s, Duty Cycle 1 %
2. Starting Tch = 25°C, VDD = −30 V, RG = 25 , VGS = −20 0 V

2SJ606 Features

• Super low on-state resistance:
RDS(on)1 = 15 m MAX. (VGS = −10 V, ID = −42 A)
RDS(on)2 = 23 m MAX. (VGS = −4.0 V, ID = −42 A)
• Low input capacitance:
Ciss = 4800 pF TYP. (VDS = −10 V, VGS = 0 V)
• Built-in gate protection diode

2SJ606 datasheet

2SJ606
PDF/DataSheet Download

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