2SJ610(TE16L1,NQ), US $ .26-.26 , Toshiba, 2SJ610(TE16L1,NQ) DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00157829 Detail

2SJ610(TE16L1,NQ): MOSFET MOSFET P-Ch 250V 2A Rdson=2.55Ohm

2SJ610(TE16L1,NQ) Data Sheet

US $ .26~.26 / Piece | Get Latest Price

Part Number:: 2SJ610(TE16L1,NQ)
Mfg:: Toshiba
Supply Ability:: 5000

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Qty
0~1500

Unit Price
$.26

Processing time
15 Days

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Upload time: 2025/12/22

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Recent History
What is this?

2SJ600 evaluate
Features: • Low on-state resistance:RDS(on)1 = 50 m MAX. (VGS = 10 V, ID = 13 A)RDS(on)2 = 7...
2SJ601 evaluate
Features: • Low on-state resistance:RDS(on)1 = 31 m MAX. (VGS = 10 V, ID = 18 A)RDS(on)2 = 4...
2SJ602 evaluate
Features: • Super low on-state resistance:RDS(on)1 = 73 m MAX. (VGS = −10 V, ID = W...

Product Details

Quick Details

Mounting Style :

SMD/SMT

Package / Case :

PW-MOLD

Description

Transistor Polarity :
Drain-Source Breakdown Voltage :
Gate-Source Breakdown Voltage :
Continuous Drain Current :
Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Packaging :
Mounting Style : SMD/SMT
Package / Case : PW-MOLD

Parameters:

Technical/Catalog Information	2SJ610(TE16L1,NQ)
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	2A
Rds On (Max) @ Id, Vgs	2.55 Ohm @ 1A, 10V
Input Capacitance (Ciss) @ Vds	381pF @ 10V
Power - Max	20W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	24nC @ 10V
Package / Case	2-7J1B
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2SJ610 TE16L1,NQ 2SJ610TE16L1,NQ

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2SJ610(TE16L1,NQ)

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