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SeekIC No. : 003434030 Detail

2SJ618(F): MOSFET P-CH 180V 10A TO-3PN

2SJ618(F) Data Sheet

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Part Number:: 2SJ618(F)
Mfg:
Supply Ability:: 5000

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1~5000

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Upload time: 2026/6/4

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Recent History
What is this?

2SJ600 evaluate
Features: • Low on-state resistance:RDS(on)1 = 50 m MAX. (VGS = 10 V, ID = 13 A)RDS(on)2 = 7...
2SJ601 evaluate
Features: • Low on-state resistance:RDS(on)1 = 31 m MAX. (VGS = 10 V, ID = 18 A)RDS(on)2 = 4...
2SJ602 evaluate
Features: • Super low on-state resistance:RDS(on)1 = 73 m MAX. (VGS = −10 V, ID = W...

Product Details

Quick Details

Series:	-	Manufacturer:	Toshiba
FET Type:	MOSFET P-Channel, Metal Oxide	Gain :	19.5 dB
Transistor Type:	-	Current - Collector (Ic) (Max):	-
FET Feature:	Logic Level Gate	Drain to Source Voltage (Vdss):	180V
Voltage - Collector Emitter Breakdown (Max):	-	Current - Continuous Drain (Id) @ 25° C:	10A
Vce Saturation (Max) @ Ib, Ic:	-	Current - Collector Cutoff (Max):	-
Rds On (Max) @ Id, Vgs:	-	DC Current Gain (hFE) (Min) @ Ic, Vce:	-
Vgs(th) (Max) @ Id:	2.1V @ 1mA	Gate Charge (Qg) @ Vgs:	-
Frequency - Transition:	-	Input Capacitance (Ciss) @ Vds:	2300pF @ 30V
Power - Max:	130W	Mounting Type:	Through Hole
Package / Case:	TO-3P-3, SC-65-3	Supplier Device Package:	TO-3P(N)

Description

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Type: MOSFET P-Channel, Metal Oxide
Gate Charge (Qg) @ Vgs: -
Current - Continuous Drain (Id) @ 25° C: 10A
Rds On (Max) @ Id, Vgs: -
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 130W
Package / Case: TO-3P-3, SC-65-3
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Manufacturer: Toshiba
Supplier Device Package: TO-3P(N)
Input Capacitance (Ciss) @ Vds: 2300pF @ 30V
Drain to Source Voltage (Vdss): 180V

Parameters:

Technical/Catalog Information	2SJ618(F)
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	180V
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	-
Input Capacitance (Ciss) @ Vds	2300pF @ 30V
Power - Max	130W
Packaging	Tube
Gate Charge (Qg) @ Vgs	-
Package / Case	2-16C1B (TO-247 N)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2SJ618 F 2SJ618F

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2SJ618(F)

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