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2SJ619

Features: `4-V gate drive`Low drain-source ON resistance: RDS (ON) = 0.15  (typ.)`High forward transfer admittance: |Yfs| = 7.7 S (typ.)`Low leakage current: IDSS = 100 A (max) (VDS = 100 V)`Enhancement-model: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)Specifications Charact...

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2SJ619: Features: `4-V gate drive`Low drain-source ON resistance: RDS (ON) = 0.15  (typ.)`High forward transfer admittance: |Yfs| = 7.7 S (typ.)`Low leakage current: IDSS = 100 A (max) (VDS = 100 V)`Enha...

2SJ619 Data Sheet

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Part Number:
2SJ619
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`4-V gate drive
`Low drain-source ON resistance: RDS (ON) = 0.15  (typ.)
`High forward transfer admittance: |Yfs| = 7.7 S (typ.)
`Low leakage current: IDSS = 100 A (max) (VDS = 100 V)
`Enhancement-model: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)


Specifications

Characteristics
Symbol
Ratings
Unit
Drain-source voltage
VDSS
-100
V
Drain-gate voltage (RGS = 20 k)
VDGR
-100

V
Gate-source voltage
VGSS
±20
V
Drain current DC (Note 1)
ID
-16
A
Pulse (Note 1)
IDP
-64
Drain power dissipation (Tc= 25°C)
PD
75
W
Single pulse avalanche energy (Note 2)
EAS
292
mJ
Avalanche current
IAR
-16
A
Repetitive avalanche energy (Note 3)
EAR
7.5
mJ
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150



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