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2SJ620

Features: ` 4-V gate drive` Low drain-source ON resistance: RDS (ON) = 63 m (typ.)` High forward transfer admittance: |Yfs| = 15 S (typ.)` Low leakage current: IDSS = −100 A (max) (VDS = −100 V)` Enhancement-model: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)S...

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SeekIC No. : 004225337 Detail

2SJ620: Features: ` 4-V gate drive` Low drain-source ON resistance: RDS (ON) = 63 m (typ.)` High forward transfer admittance: |Yfs| = 15 S (typ.)` Low leakage current: IDSS = −100 A (max) (VDS = ͨ...

2SJ620 Data Sheet

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Part Number:
2SJ620
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` 4-V gate drive
` Low drain-source ON resistance: RDS (ON) = 63 m (typ.)
` High forward transfer admittance: |Yfs| = 15 S (typ.)
` Low leakage current: IDSS = −100 A (max) (VDS = −100 V)
` Enhancement-model: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)


Specifications

Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
-100
V
Drain-gate voltage (RGS = 20 k)
VGDR
-100
V
Gate-source voltage
ID
±20
V
Drain current DC (Note 1)
IDP
-18
A
Pulse (Note 1)
PD
-72
Drain power dissipation (Tc = 25°C)
EAS
125
W
Single pulse avalanche energy (Note 2)
IAR
937
mJ
Avalanche current
IAR
-18
A
Repetitive avalanche energy (Note 3)
EAR
12.5
mJ
Channel temperature
Tch
150
Storage temperature range
Tstg
-55 to150



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