Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Type: MOSFET P-Channel, Metal Oxide
Current - Continuous Drain (Id) @ 25° C: 12A
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) @ Vgs: 41nC @ 10V
Mounting Type: Through Hole
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Manufacturer: SANYO Semiconductor (U.S.A) Corporation
Supplier Device Package: TO-220ML
Rds On (Max) @ Id, Vgs: 136 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds: 2090pF @ 20V
Features: • Low ON-resistance.
• 4V drive.
• Ultrahigh-speed switching.
• Motor drive, DC / DC converter.
• Avalanche resistance guarantee.Pinout
Specifications
| Absolute maximum ratings |
| VDSS [V] |
100 |
| VGSS [V] |
20 |
| ID [A] |
12 |
| PD [W] |
25
Tc=25°C |
| Electrical characteristics |
RDS(on) typ []
VGS=10V
ID [A]=6 |
0.1 |
RDS(on) typ []
VGS=4V
ID [A]=6 |
0.136 |
| VGS(off) min [V] |
1.2 |
| VGS(off) max [V] |
2.6 |
| |yfs| typ [S] |
13 |
| Ciss typ [pF] |
2090 |
| Qg typ [nC] |
41 |
| Parameter |
Symbol |
Conditions |
Ratings |
Unit |
| Drain-to-Source Voltage |
VDSS |
|
-100 |
V |
| Gate-to-Source Voltage |
VGSS |
|
±20 |
V |
| Drain Current (DC) |
ID |
|
-12 |
A |
| Drain Current (Pulse) |
IDP |
PW10ms, duty cycle1% |
-48 |
A |
| Allowable Power Dissipation |
PD |
Tc=25°C |
2.0
25 |
W |
| Channel Temperature |
Tch |
|
150 |
°C |
| Storage Temperature |
Tstg |
|
-55 to +150 |
°C |
| Avalanche Energy (Single Pulse) *1 |
EAS |
|
144 |
mJ |
| Avalanche Current *2 |
IAV |
|
-12 |
A |
Note : *1 VDD=-50V, L=1mH, IAV=-12A
*2 L1mH, Single pulse
2SJ655 Data Sheet
