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2SJ656

MOSFET POWER MOSFET

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SeekIC No. : 00153451 Detail

2SJ656: MOSFET POWER MOSFET

2SJ656 Data Sheet

floor Price/Ceiling Price

US $ 1.52~2.56 / Piece | Get Latest Price
Part Number:
2SJ656
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $2.56
  • $2.06
  • $1.87
  • $1.52
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 100 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : - 18 A
Resistance Drain-Source RDS (on) : 58 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220ML Packaging : Bulk    

Description

Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : 20 V
Packaging : Bulk
Drain-Source Breakdown Voltage : - 100 V
Continuous Drain Current : - 18 A
Resistance Drain-Source RDS (on) : 58 mOhms
Package / Case : TO-220ML


Features:

• Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
• Motor drive, DC / DC converter.




Pinout






Specifications

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS -100 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID -18 A
Drain Current (Pulse) IDP PW10ms, duty cycle1% -72 A
Allowable Power Dissipation PD 2.0 W
Tc=25°C 30 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg -55 to +150 °C


Absolute maximum ratings
VDSS [V] 100
VGSS [V] 20
ID [A] 18
PD [W] 30
Tc=25°C
Electrical characteristics
RDS(on) typ []
VGS=10V
ID [A]=9		 0.058
RDS(on) typ []
VGS=4V
ID [A]=9		 0.074
VGS(off) min [V] 1.2
VGS(off) max [V] 2.6
|yfs| typ [S] 20
Ciss typ [pF] 4200
Qg typ [nC] 74





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