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2SJ680

Application`Low drain-source ON-resistance: RDS(ON)= 1.6 (typ.)`High forward transfer admittance: |Yfs| = 2.0 S (typ.) `Low leakage current: IDSS= 100A (max) (VDS = 200 V)`Enhancement model: Vth = 1.5 ~ 3.5 V (VDS = 10 V, ID= 1 mA)Specifications Characteristic Symbol Rating Unit ...

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SeekIC No. : 004225373 Detail

2SJ680: Application`Low drain-source ON-resistance: RDS(ON)= 1.6 (typ.)`High forward transfer admittance: |Yfs| = 2.0 S (typ.) `Low leakage current: IDSS= 100A (max) (VDS = 200 V)`Enhancement model: Vth = 1...

2SJ680 Data Sheet

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Part Number:
2SJ680
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

`Low drain-source ON-resistance: RDS(ON) = 1.6  (typ.) 
`High forward transfer admittance: |Yfs| = 2.0 S (typ.) 
`Low leakage current: IDSS = 100A (max) (VDS = 200 V) 
`Enhancement model: Vth = 1.5 ~ 3.5 V (VDS = 10 V, ID= 1 mA) 


Specifications

Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS=20k)
Gate-source voltage
VDSS
VDGR
VGSS
-200
-200
±20
V
V
V
Drain current DC (Note 1)
ID
-2.5
A
Pulse (Note 1)
IDP
-10
Drain power dissipation (Tc=25)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
PD
EAS
IAR
EAR
Tch
Tstg
20
97.5
-2.5
2.0
150
-55~150
W
mJ
A
mJ


Note:  Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept an Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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