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Features: ` 4-V gate drive` Low drain−source ON resistance: RDS(ON) = 0.12 (typ.)` High forward transfer admittance: |Yfs| = 5.0 S (typ.)` Low leakage current: IDSS = −100 A (max) (VDS = −60 V)` Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1...

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SeekIC No. : 004225374 Detail

2SJ681: Features: ` 4-V gate drive` Low drain−source ON resistance: RDS(ON) = 0.12 (typ.)` High forward transfer admittance: |Yfs| = 5.0 S (typ.)` Low leakage current: IDSS = −100 A (max) (VDS ...

2SJ681 Data Sheet

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Part Number:: 2SJ681
Supply Ability:: 5000

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Upload time: 2024/4/18

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Recent History
What is this?

2SJ600 evaluate
Features: • Low on-state resistance:RDS(on)1 = 50 m MAX. (VGS = 10 V, ID = 13 A)RDS(on)2 = 7...
2SJ601 evaluate
Features: • Low on-state resistance:RDS(on)1 = 31 m MAX. (VGS = 10 V, ID = 18 A)RDS(on)2 = 4...
2SJ602 evaluate
Features: • Super low on-state resistance:RDS(on)1 = 73 m MAX. (VGS = −10 V, ID = W...

Product Details

Description

Features:

` 4-V gate drive
` Low drain−source ON resistance: R_DS(ON) = 0.12 (typ.)
` High forward transfer admittance: |Yfs| = 5.0 S (typ.)
` Low leakage current: I_DSS = −100 A (max) (V_DS= −60 V)
` Enhancement mode: V_th = −0.8 to −2.0 V (V_DS = −10 V, I_D = −1 mA)

Specifications

Characteristics		Symbol	Rating	Unit
Drain−source voltage		V_DSS	−60	V
Drain−gate voltage (R_GS = 20 k)		V_DGR	−60	V
Gate−source voltage		V_GSS	±20	V
Drain current	DC(Note 1)	I_D	−5	A
Drain current	Pulse (Note 1)	I_DP	−20	A
Drain power dissipation		P_D	20	W
Single pulse avalanche energy (Note 2)		E_AS	40.5	mJ
Avalanche current		I_AR	-5	A
Repetitive avalenche energy (Note 3)		E_AR	2	mJ
Channel temperature		Tch	150
Storage temperature range		Tstg	-55~150

Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: V_DD = −25 V, Tch = 25(initial), L = 2.2 mH,R_G = 25 , I_AR = −5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.

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2SJ681

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