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2SJ687

Features: • Low on-state resistanceRDS(on)1 = 7.0 m MAX. (VGS = −4.5 V, ID = −10 A)RDS(on)2 = 9.0 m MAX. (VGS = −3.0 V, ID = −10 A)RDS(on)3 = 20 m MAX. (VGS = −2.5 V, ID = −10 A)• 2.5 V drive available• Avalanche capability ratingsSpecification...

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SeekIC No. : 004225377 Detail

2SJ687: Features: • Low on-state resistanceRDS(on)1 = 7.0 m MAX. (VGS = −4.5 V, ID = −10 A)RDS(on)2 = 9.0 m MAX. (VGS = −3.0 V, ID = −10 A)RDS(on)3 = 20 m MAX. (VGS = −2....

2SJ687 Data Sheet

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Part Number:
2SJ687
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low on-state resistance
RDS(on)1 = 7.0 m MAX. (VGS = −4.5 V, ID = −10 A)
RDS(on)2 = 9.0 m MAX. (VGS = −3.0 V, ID = −10 A)
RDS(on)3 = 20 m MAX. (VGS = −2.5 V, ID = −10 A)
• 2.5 V drive available
• Avalanche capability ratings


Specifications

Drain to Source Voltage (VGS = 0 V)                       VDSS             −20            V
Gate to Source Voltage (VDS = 0 V)                        VGSS             m12            V
Drain Current (DC) (TC = 25°C)                            ID(DC)            m20            A
Drain Current (pulse) Note1                                 ID(pulse)          m60            A
Total Power Dissipation (TC = 25°C)                       PT1                36            W
Total Power Dissipation (TA = 25°C)                       PT2                1.0            W
Channel Temperature                                               Tch               150          °C
Storage Temperature                                               Tstg   −55 to +150        °C
Single Avalanche Current Note2                                IAS               −20             A
Single Avalanche Energy Note2                                 EAS                40            mJ
Notes 1. PW 10 s, Duty Cycle 1%
2. Starting Tch = 25°C, VDD = −10 V, RG = 25 , VGS = −12 0 V


Description

The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage.


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