2SJ687-ZK-E1-AY

MOSFET P-CH -20V -20A TO-252

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SeekIC No. : 003430348 Detail

2SJ687-ZK-E1-AY: MOSFET P-CH -20V -20A TO-252

floor Price/Ceiling Price

US $ .49~1.07 / Piece | Get Latest Price
Part Number:
2SJ687-ZK-E1-AY
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~25
  • 25~100
  • 100~250
  • 250~500
  • 500~1000
  • Unit Price
  • $1.07
  • $.92
  • $.83
  • $.75
  • $.67
  • $.58
  • $.49
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2026/7/16

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Product Details

Quick Details

Series: - Manufacturer: Renesas Electronics America
FET Type: MOSFET P-Channel, Metal Oxide Gain : 15.5 dB
Transistor Type: - Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 20A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 7 mOhm @ 10A, 4.5V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: - Gate Charge (Qg) @ Vgs: 57nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 4400pF @ 10V
Power - Max: 1W Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (MP-3ZK)    

Description

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Power - Max: 1W
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25° C: 20A
Vgs(th) (Max) @ Id: -
Manufacturer: Renesas Electronics America
Supplier Device Package: TO-252 (MP-3ZK)
Gate Charge (Qg) @ Vgs: 57nC @ 4.5V
Rds On (Max) @ Id, Vgs: 7 mOhm @ 10A, 4.5V
Input Capacitance (Ciss) @ Vds: 4400pF @ 10V


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