2SK1499

The 2SK1499 is designed as one kind of N-channel power MOS Field Effect transistor designed for high voltage switching applications. Features of this device are:(1)high avalanche capability ratings;(2)built-in G-S gate protection diodes;(3)low Ciss Ciss= 3300 pF typ.;(4)low on-state resistance RDS(on)= 0.25 max. (VGS=10 V, ID=13 A).

The absolute maximum ratings of the 2SK1499 can be summarized as:(1)drain to source voltage: 500 V;(2)gate to source voltage: +/-30 V;(3)drain current (DC):±25.0 A;(4)drain current (pulse):±100 A;(5)total power dissipation (Tc=25 °C): 160 W;(6)channel tempera-ture:150 °C;(7)storage temperature:55 to +150 °C;(8)operating temperature: -55 to +80 °C.

And the electrical characteristics (TA=25 °C) of the 2SK1499 can be summarized as:(1)drain to source on-state resistance: 0.20 ;(2)gate to source cut-off voltage: 2.5 to 3.5 V;(3)forward transfer admittance: 8.0 S;(4)drain leakage current: 100 A;(5)gate to source leakage current: +/-10.0 A;(6)input capacitance: 3300 pF;(7)output capacitance: 1100 pF;(8)reverse transfer capacitance: 480 pF;(9)turn-on delay time: 50 ns;(10)rise time: 130 ns;(11)turn-off delay time: 180 ns;(12)fall time: 70 ns. If you want to know more information such as the electrical characteristics about this device, please download the datasheet in www.seekic.com or www.chinaicmart.com.