2SK1549-R

DescriptionThe 2SK1549-R is a kind of N-channel enhancement mode power MOSFET. It is designed for switching. The following is the absolute maximum ratings of 2SK1549-R at TC=25: (1)drain-source voltage, VDSS: 250 V; (2)drain-gate voltage, VDGR: 250 V at RGS=20 k; (3)continuous drain current, ID: ...

product image

2SK1549-R Picture
SeekIC No. : 004225627 Detail

2SK1549-R: DescriptionThe 2SK1549-R is a kind of N-channel enhancement mode power MOSFET. It is designed for switching. The following is the absolute maximum ratings of 2SK1549-R at TC=25: (1)drain-source vol...

floor Price/Ceiling Price

Part Number:
2SK1549-R
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/27

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Description

The 2SK1549-R is a kind of N-channel enhancement mode power MOSFET. It is designed for switching.

The following is the absolute maximum ratings of 2SK1549-R at TC=25: (1)drain-source voltage, VDSS: 250 V; (2)drain-gate voltage, VDGR: 250 V at RGS=20 k; (3)continuous drain current, ID: ±20 A; (4)pulsed drain current, ID(pulse): ±80 A; (5)gate-source voltage, VGS: ±20 V; (6)maximum power dissipation, PD: 80 W; (7)operating temperature, Tch: 150; (8)storage temperature range, Tstg: -55 to +150; (9)thermal resistance channel to air, Rth(ch-a): 1.56/W; (10)thermal resistance channel to case, Rth(ch-c): 30.0/W.

What comes next is the electrical characteristics of 2SK1549-R at TC=25 (unless otherwise specified): (1)drain-source breakdown voltage, BVDSS: 250 V min at ID=1 mA, VGS=0 V; (2)gate threshold voltage, VGS(th): 2.1 V min, 3.0 V typ and 4.0 V max at ID=10 mA, VDS=VGS; (3)zero gate voltage drain current, IDSS: 10A typ and 500A max at VDS=250 V, VGS=0 V, Tch=25; (4)zero gate voltage drain current, IDSS: 0.2 mA typ and 1.0 mA max at VDS=250 V, VGS=0 V, Tch=125; (5)gate-source leakage current, IGSS: 10 nA typ and 100 nA max at VGS=±20 V, VDS=0 V; (6)drain-source-on-state resistance, RDS(on): 0.11 typ and 0.15 max at ID=10 A, VGS=10 V.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Industrial Controls, Meters
Audio Products
Cables, Wires - Management
Undefined Category
Batteries, Chargers, Holders
Test Equipment
View more