Features: • Directly driven by ICs having a 3 V power supply.• Not necessary to consider driving current because of its high input impedance.• Possible to reduce the number of parts by omitting the bias resistor.Specifications Drain to Source Voltage (VGS = 0 V)Gate to Sourc...
2SK1580: Features: • Directly driven by ICs having a 3 V power supply.• Not necessary to consider driving current because of its high input impedance.• Possible to reduce the number of part...
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Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature |
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg |
16 ±16 ±100 ±200 150 150 55 to +150 |
V V mA mA mW °C °C |
The 2SK1580 is an N -channel vertical type MOS FET which can be driven by 2.5 V power supply. As the 2SK1580 is driven by low voltage and does not require consideration of driving current, it is suitable for appliance including VCR cameras and headphone stereos which need power saving.