2SK1591

The 2SK1591 is designed as one kind of N-channel Power MOS FET Array that can be driven by 5 V power supply. This device can be used in high-speed switching device in digital circuits. Features of this device are:(1)directly driven by ICs having a 5 V power supply;(2)not necessary to consder driving current because of its high input impedance;(3)possible to reduce the number of parts by omitting the bias resistor.

The absolute maximum ratings of the 2SK1591 can be summarized as:(1)drain to source voltage: 100 V;(2)gate to source voltage: +/-20 V;(3)drain current (DC):±0.2 A;(4)drain current (pulse):±0.4 A;(5)total power dissipation (Tc=25 °C): 200 mW;(6)channel tempera-ture:150 °C;(7)storage temperature:55 to +150 °C;(8)operating temperature: -55 to +80 °C.

And the electrical characteristics (TA=25 °C) of the 2SK1591 can be summarized as:(1)drain to source on-resistance: 5.8 ;(2)gate to source cutoff voltage: 0.8 V to 1.8 V(3)forward transfer admittance: 60 mS;(4)drain cut-off current: 1.0 A;(5)gate to source leakage current: +/-1.0 A;(6)input capacitance: 25 pF;(7)output capacitance: 15 pF;(8)feedback capacitance: 2 pF;(9)turn-on delay time: 60 ns;(10)rise time: 100 ns. If you want to know more information such as the electrical characteristics about the 2SK1591, please download the datasheet in www.seekic.com or www.chinaicmart.com.