2SK1623

The 2SK1623 is a kind of silicon N-Channel MOS FET. It is designed for high speed power switching applications. There are some features as follows: (1)low on-resistance; (2)high speed switching; (3)4 V gate drive device: can be driven from 5 V source; (4)suitable for motor drive, DC-DC converter, power switch and solenoid drive.

What comes next is about the absolute maximum ratings (Ta=25): (1)drain to source voltage, V(BR)DSS: 100 V; (2)gate to source voltage, VGSS: ±20 V; (3)drain current, ID: 20 A; (4)drain peak current, ID(pulse): 80 A; (5)body to drain diode reverse drain current, IDR: 20 A; (6)channel dissipation, Pch: 50 W; (7)channel temperature, Tch: 150; (8)storage temperature, Tstg: -55 to +150.

The following is about the electrical characteristics (Ta=25): (1)drain to source breakdown voltage, V(BR)DSS: 100 V min when ID=10 mA, VGS=0; (2)gate to source breakdown voltage, V(BR)GSS: ±20 V min when IG=±100 mA, VDS=0; (3)gate to source leak current, IGSS: ±10 A max when VGS=±16 V, VDS=0; (4)zero gate voltage drain current, IDSS: 250 A max VDS=80 V, VGS=0; (5)gate to source cutoff voltage, VGS(off): 1.0 V min and 2.0 V max at ID=1 mA, VDS=10 V; (6)static drain to source on state, RDS(on): 0.065 typ and 0.085 max when ID=10 A, VGS=10 V; 0.085 typ and 0.12 max when ID=10 A, VGS=4 V  ; (7)input capacitance, Ciss: 1300 pF typ at VDS=10 V, VGS=0, f=1 MHz; (8)output capacitance, Coss: 540 pF typ at VDS=10 V, VGS=0, f=1 MHz; (9)reverse transfer capacitance, Crss: 160 pF typ at VDS=10 V, VGS=0, f=1 MHz.