The 2SK1995 is N-channel MOS field effect transister designed for high voltage switching applications. The features of it are as follows: (1)low on-state resistance: RDS = 4.0 (VGS = 10V, ID = 2.0A); (2)low Ciss = 790 pF TYP; (3)Built-in G-S gate protection ...
The 2SK1994 is N-channel MOS field effect transister designed for high voltage switching applications. The features of it are as follows: (1)low on-state resistance: RDS = 7.5 (VGS = 10V, ID = 1.0A); (2)low Ciss = 430 pF TYP; (3)Built-in G-S gate protection ...
The 2SK1992 is N-channel MOS field effect transister designed for high voltage switching applications. The features of it are as follows: (1)low on-state resistance: RDS 0.9 (VGS = 10V, ID = 3.0A); (2)low Ciss = 1060 pF TYP; (3)Built-in G-S gate protection ...
The 2SK1990 is N-channel MOS field effect transister designed for high voltage switching applications. The features of it are as follows: (1)low on-state resistance: RDS = 1.4 (VGS = 10V, ID = 2.5A); (2)low Ciss = 610 pF TYP; (3)Built-in G-S gate protection ...