2SK2135

The 2SK2135 is N-channel MOS field effect transister designed for high voltage switching applications. The features of 2SK2135 are as follows: (1)low on-state resistance: RDS = 0.18 max. (VGS = 10V, ID = 7.0A); (2)low Ciss = 1100 pF TYP; (3)Built-in G-S gate protection diode; (4)high avalanche capability ratings.

What comes next is the maximum ratings of 2SK2135: (1)drain to source voltage: 200V; (2)gate to source voltage: ±30V; (3)drain current(DC): ±14A; (4)drain current(pulse): ±56A; (5)total power dissipation(Tc = 25): 35W; (6)channel temperature: 150; (7)storge temperature: -55 to +150; (8)single avalanche current: 14A; (9)single avalanche energy: 392mJ.

The following is the electrical characteristics of 2SK2135: (1)drain to source on-state resistance: 0.18 max at VGS=10V,ID=7A; (2)gate to source cutoff voltage: 2.0V min and 4.0V max at VDS=10V, ID=1mA; (3)forward transfer admittance: 4.0S min at VDS=10V, ID=7.0A; (4)drain leakage current: 100A max at VDS=200V, VGS=0; (5)gate to source leakage current: ±100A max at VGS=±30V, VDS=0; (6)input capacitance: 1100pF typical at VDS=10V, VGS=0, f=1MHz; (7)output capacitance: 540pF typical at VDS=10V, VGS1=0, f=1MHz; (8)reverse transfer capacitance: 190pF typical at VDS=10V, VGS=0, f=1MHz. There is not much information about the product, if you want to get more information, please pay attention to our website and we will update it in time.