MOSFET N-CH 160V 0.5A TO-220AB
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Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
| Series: | - | Manufacturer: | Renesas Electronics America | ||
| FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
| Gain : | 19.5 dB | Current - Collector (Ic) (Max): | - | ||
| FET Feature: | Logic Level Gate | Drain to Source Voltage (Vdss): | 160V | ||
| Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 500mA | ||
| Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
| Rds On (Max) @ Id, Vgs: | - | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
| Vgs(th) (Max) @ Id: | - | Gate Charge (Qg) @ Vgs: | - | ||
| Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 90pF @ 10V | ||
| Power - Max: | 30W | Mounting Type: | Through Hole | ||
| Package / Case: | TO-220-3 | Supplier Device Package: | TO-220AB |
| Technical/Catalog Information | 2SK214-E |
| Vendor | Renesas Technology America |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 160V |
| Current - Continuous Drain (Id) @ 25° C | 500mA |
| Rds On (Max) @ Id, Vgs | - |
| Input Capacitance (Ciss) @ Vds | 90pF @ 10V |
| Power - Max | 30W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | - |
| Package / Case | TO-220AB |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | 2SK214 E 2SK214E |