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2SK2157

Features: • New package intermediate between small-signal and power models• Can be directly driven by output of 5-V IC• Low ON resistance R DS(on) 0.15 @VGS = 4 V, ID = 2.5 A R DS(on) 0.10 @VGS = 10 V, ID = 2.5 ASpecifications PARAMETER SYMBOL TEST CONDITIONS RATI...

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SeekIC No. : 004225959 Detail

2SK2157: Features: • New package intermediate between small-signal and power models• Can be directly driven by output of 5-V IC• Low ON resistance R DS(on) 0.15 @VGS = 4 V, ID = 2.5 A R D...

2SK2157 Data Sheet

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Part Number:
2SK2157
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/24

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Product Details

Description



Features:

• New package intermediate between small-signal and power models
• Can be directly driven by output of 5-V IC
• Low ON resistance
   R DS(on) 0.15 @VGS = 4 V, ID = 2.5 A
   R DS(on) 0.10 @VGS = 10 V, ID = 2.5 A


Specifications

PARAMETER
SYMBOL
 TEST CONDITIONS
RATING
UNIT
Drain to Source Voltage
VDSS
 VGS = 0
30
V
Gate to Source Voltage
VGSS
 VDS = 0
±20
V
Drain Current (DC)
I D(DC)
±0.5
A
Drain Current (Pulse)
I D(pulse)
 PW 10 ms
Duty cycle 50 %
±10.0
A
Total Power Dissipation
PT
 7.5 cm2 * 0.7 mm, ceramic substrate used
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C



Description

The 2SK2157 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators and DC/DC converters.




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