2SK2158-T1B

The 2SK2158-T1B is a kind of N-channel vertical type MOSFET.It is suitable for use in low-voltage portable systems such as headphone stereo sets and camcorders.It is available in G23 package.

The following is features of 2SK2158-T1B.(1) capable of drive gate with 1.5 V; (2) no need to consider driving current; (3) bias resistance can be omitted, enabling reduction in total number of parts.

What comes next is absolute maximum ratings of 2SK2158-T1Bat TA is 25.(1): drain to Source voltage(VDSS) is 50 V at VGS is 0 V; (2): gate to Source voltage(VGSS) is ±7.0 V at VDS is 0 V; (3): drain current(DC) is ±0.1 A; (4): drain current(pulse) is ±0.2 A when PW 10 ms,duty cycle 50 %; (5): total power dissipation(PT) is 200 mW; (6): channel temperature(TCH) is 150; (7): storage temperature(TSTG) is from -55 to 150; (8): the maximum of the drain cutoff current is 1.0 A at the condition of VDS is 50 V and VGS is 0 V; (9): the maximum of the gate leakage current is ±30 A at VGS is ±7.0 V and VDS is 0 V; (10): the typical of the reverse transfer capacitance is 1 pF,and 8 pF for output capacitance and 6 for input capacitance when VDS is 3 V, VGS is 0 V and f is 1.0 MHz; (11): the typical of the rise time is 48 ns and 31 ns for the fall time and 9 ns for the turn-on delay time when VDD is 3 V, ID is 20 mA and RL is 150 .