2SK216

Features: • Suitable for direct mounting• High forward transfer admittance• Excellent frequency response• Enhancement-modeApplication·High frequency and low frequency power amplifier, high speed switching.·Complementary pair with 2SJ76, J77, J78, J79Specifications Item...

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SeekIC No. : 004225965 Detail

2SK216: Features: • Suitable for direct mounting• High forward transfer admittance• Excellent frequency response• Enhancement-modeApplication·High frequency and low frequency power a...

floor Price/Ceiling Price

Part Number:
2SK216
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2019/9/20

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Product Details

Description



Features:

• Suitable for direct mounting
• High forward transfer admittance
• Excellent frequency response
• Enhancement-mode





Application

·High frequency and low frequency power amplifier, high speed switching.

·Complementary pair with 2SJ76, J77, J78, J79





Specifications

Item Symbol Ratings Unit
Drain to source voltage 2SK213 VDSX 140 V
2SK214 160
2SK215 180
2SK216 200
Gate to source voltage VGSS ±15 V
Drain current ID 500 mA
Bodydrain diode reverse drain current IDR 500 mA
Channel dissipation Pch 1.75 W
Pch* 30
Channel temperature Tch 150
Storage temperature Tstg 45 to +150

* Value at Tc = 25






Description

This is the description about 2SK214 and 2SK215 and 2SK216 of the silicon N channel MOS FET, high frequency and low frequency power amplifier, high speed switching complementary pair with 2sj76, j77, j78, j79.

When test conditions are @ 25, the following data is available. Pulse voltage is 3.2 Volts. Rise time is 3.0 ns (10%-90%). Pulse width is 1.2 x total delay. Pulse period is 4 x pulse width. Supply current is 35 mA typical. Supply voltage is 5.0 Volts.

Here are the features of 2SK216. (1 ) Suitable for direct mounting; (2 )High forward transfer admittance; (3 )Excellent frequency response; (4 )Enhancement-mode.

The electrical characteristics and absolute maximum ratings of 2SK216 are these. Gate to source voltage VGSS is ±15 V. Drain current ID is 500 mA. Body to drain diode reverse drain current IDR is 500 mA. Channel dissipation Pch is 1.75 W. Channel dissipation Pch*1 is 30 W. Channel temperature Tch is 150 °C. Storage temperature Tstg is from 45 to +150 °C. Gate to source breakdown voltage is ±15 V. Gate to source voltage is from 0.2 to1.5 V. Drain to source saturation voltage is 2.0 V. Forward transfer admittance is 20 mS. Input capacitance is 90 pF. Reverse transfer capacitance is 2.2 pF.

These are the notes: For some grades, production may be terminated. Please contact the renesas sales office to check the state of production before ordering the product..

At present there is not too much information about this model. If you are willing to find more about the SK214 and 2SK215 and 2SK216, please pay attention to our web! We will promptly update the relevant information. You can find it in www.ChinaICMart.com or www.seekic.com. Welcome to contact with us.








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