2SK2378

The 2SK2378 is a N-channel Silicon MOSFET Transistor designed for Ultrahigh-Speed Switching Applications.The 2SK2378 has 4 features including Low ON-resistance;Ultrahigh-speed switching;Low-voltage drive;Micaless package facilitaing mounting.
The absolute maximun ratings of the 2SK2378 are at Ta=25°C, Drain to source breakdown voltage VDSS is 200V;Gate to source voltage VGSS is ±20V;drain Current ID(DC) is 13A;allowable power dissipation is 2.0 W;channel temperature is 150°C maxnimum;Storage temperature is -55 to +150°C.
The 2SK2378/2SK2378 ISOSMART chipset is designed to control the gates of two Power MOSFETs or Power IGBTs that are connected in a half- bridge (phase-leg) configuration for driving multiple-phase motors, or used in applications that require half-bridge power circuits. The 2SK2378/ 2SK2378 is a full-feature chipset consisting of two 16-Pin DIP or SO devices interfaced and isolated by two small-signal ferrite pulse transformers. The small-signal transformers provide greater than 1200 V isolation. The Atmel architecture was developed to provide the highest levels of performance, functional density and design flexibility in an FPGA. The cells in the Atmel array are small, efficient and can implement any pair of Boolean functions of (the same) three inputs or any single Boolean function of four inputs. The cells small size leads to arrays with large numbers of cells, greatly multiplying the functionality in each cell. A simple, high-speed busing network provides fast, efficient communication over medium and long distances.
AMDs Flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a sector simultaneously via Fowler-Nordheim tunneling. The data is programmed using hot electron injection. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
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