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SeekIC No. : 00164191 Detail

2SK2381(F,T): MOSFET MOSFET N-Ch 200V 5A Rdson 0.8 Ohm

2SK2381(F,T) Data Sheet

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Part Number:: 2SK2381(F,T)
Mfg:: Toshiba
Supply Ability:: 5000

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Upload time: 2026/6/12

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Recent History
What is this?

2SK2002-01MR evaluate
Features: High Speed SwitchingLow On-ResistanceNo Secondary BreakdownLow Driving PowerHigh Voltage...
2SK2003-01MR evaluate
Features: - High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Hi...
2SK2007 evaluate
Features: • Low onresistance• High speed switching• Low drive current• No ...

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	200 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	5 A
Resistance Drain-Source RDS (on) :	0.8 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-220 NIS

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 5 A
Resistance Drain-Source RDS (on) : 0.8 Ohms
Package / Case : TO-220 NIS

Parameters:

Technical/Catalog Information	2SK2381(F,T)
Vendor	Toshiba
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	5A
Rds On (Max) @ Id, Vgs	800 mOhm @ 2.5A, 10V
Input Capacitance (Ciss) @ Vds	440pF @ 10V
Power - Max	25W
Packaging	Tube
Gate Charge (Qg) @ Vgs	10nC @ 10V
Package / Case	2-10R1B
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2SK2381 F,T 2SK2381F,T

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2SK2381(F,T)

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