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2SK2479

Features: • Low On-Resistance R DS(on) = 7.5 (VGS = 10 V, ID = 2.0 A)• Low Ciss Ciss = 485 pF TYP.• High Avalanche Capability RatingsSpecificationsDrain to Source Voltage VDSS............................ 900 VGate to Source Voltage VGSS............................ ±30 VDrain Curr...

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SeekIC No. : 004226135 Detail

2SK2479: Features: • Low On-Resistance R DS(on) = 7.5 (VGS = 10 V, ID = 2.0 A)• Low Ciss Ciss = 485 pF TYP.• High Avalanche Capability RatingsSpecificationsDrain to Source Voltage VDSS........

2SK2479 Data Sheet

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Part Number:
2SK2479
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low On-Resistance
   R DS(on) = 7.5  (VGS = 10 V, ID = 2.0 A)
• Low Ciss   Ciss = 485 pF TYP.
• High Avalanche Capability Ratings


Specifications

Drain to Source Voltage VDSS............................ 900 V
Gate to Source Voltage VGSS............................ ±30 V
Drain Current (DC) I D(DC) .............................±3.0 A
Drain Current (pulse)* I D(pulse) ..........................±8.0 A
Total Power Dissipation (Tc = 25 °C) PT1  ......................70 W
Total Power Dissipation (TA = 25 °C) PT2 ......................1.5 W
Channel Temperature Tch  .............................150 °C
Storage Temperature Tstg ........................ 55 to +150 °C
Single Avalanche Current** IAS............................ 3.0 A
Single Avalanche Energy** EAS............................5.4 mJ

* PW 10 ms, Duty Cycle 1 %
** Starting Tch = 25 °C, RG = 25 , VGS = 20 V  0


Description

The 2SK2479 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.


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